FDB8160【PDF 3/7 页】MOSFET N-CH 30V 80A D2PAK

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Electrical Characteristics T J = 25 o C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Switching Characteristics

t on

t d(on)

Turn-On Time

Turn-On Delay Time

-

-

-

17.2

60

-

ns

ns

t r

t d(off)

t f

t off

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-Off Time

V DD = 15V, I D = 80A,

V GS = 10V, R GS = 1.3 Ω

-

-

-

-

18.9

60

27

-

-

-

-

137

ns

ns

ns

ns

Drain-Source Diode Characteristics

V SD

t rr

Q rr

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge

I SD = 80A

I SD = 40A

I F = 80A, dI SD /dt = 100A/ μ s

-

-

-

-

0.9

0.8

48

42

1.25

1.0

62

55

V

V

ns

nC

Notes:

1: Starting T J = 25 o C, L = 0.63mH, I AS = 64A

2: Pulse width = 100s.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB8160_F085 Rev. C

3

www.fairchildsemi.com

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